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Rev 2: Nov 2004
AO3402, AO3402L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO3402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3402L( Green Product ) is offered in a lead-free package.
Features
VDS (V) = 30V ID = 4 A RDS(ON) < 55m (VGS = 10V) RDS(ON) < 70m (VGS = 4.5V) RDS(ON) < 110m (VGS = 2.5V)
TO-236 (SOT-23) Top View G D S G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25C Power Dissipation A TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C TA=25C TA=70C ID IDM PD TJ, TSTG
Maximum 30 12 4 3.4 15 1.4 1 -55 to 150
Units V V A
W C
Symbol
A A
t 10s Steady-State Steady-State
RJA RJL
Typ 70 100 63
Max 90 125 80
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO3402, AO3402L
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=4A TJ=125C VGS=4.5V, ID=3A VGS=2.5V, ID=2A VDS=5V, ID=4A 0.6 10 1 45 66 55 83 8 0.8 Min 30 1 5 100 1.4 55 80 70 110 1 2.5 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
Static Drain-Source On-Resistance
gFS VSD IS
Forward Transconductance IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
390 54.5 41 3 4.34 0.6 1.38 3.3
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time
VGS=4.5V, VDS=15V, ID=4A
VGS=10V, VDS=15V, RL=3.75, RGEN=6
1 21.7 2.1 12 6.3
IF=4A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO3402, AO3402L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15 12 4.5V 9 ID (A) 6 3 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 150 125 VGS=2.5V RDS(ON) (m) 100 75 50 25 0 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 200 1.0E+01 1.0E+00 150 RDS(ON) (m) ID=2A IS (A) 1.0E-01 125C 1.0E-02 1.0E-03 1.0E-04 25C 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 25C 100 125C VGS=4.5V Normalized On-Resistance 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 2.5V ID(A) 6 4 125C VGS=2V 2 0 0 0.5 1 1.5 25C 2 2.5 3 3.5 10 10V 3V 8 VDS=5V
VGS(Volts) Figure 2: Transfer Characteristics
VGS=4.5V VGS=10V
VGS=2.5V
VGS=10V
50
Alpha & Omega Semiconductor, Ltd.
AO3402, AO3402L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 600 VDS=15V ID=4A Capacitance (pF) 500 Ciss 400 300 200 100 0 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Coss Crss
100.0
TJ(Max)=150C TA=25C
20 TJ(Max)=150C TA=25C 100s 1ms 0.1s 10ms 10s Power (W) 100 15
10.0 ID (Amps)
RDS(ON) limited
10
1.0 1s 10s DC 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10
5
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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